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Jeong-Geun Kim and Kang-Hee Lee
In this paper, a 4-bit digital step attenuator using 0.25 µm GaN HEMT technology for wideband radar systems is presented. A switched-path attenuator topology with resistive T-type attenuators and double-pole double-throw (DPDT) switches was used to achie...
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Dalal Fadil, Vikram Passi, Wei Wei, Soukaina Ben Salk, Di Zhou, Wlodek Strupinski, Max C. Lemme, Thomas Zimmer, Emiliano Pallecchi, Henri Happy and Sebastien Fregonese
This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavi...
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Hsieh-Hung Hsieh; Yu-Te Liao; Liang-Hung Lu
Pág. 1098 - 1104
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Chin-Shen Lin; Pei-Si Wu; Mei-Chao Yeh; Jia-Shiang Fu; Hong-Yeh Chang; Kun-You Lin; Huei Wang
Pág. 1190 - 1199
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Chao, S.-F.; Kuo, C.-C.; Tsai, Z.-M.; Lin, K.-Y.; Wang, H.
Pág. 2691 - 2699
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Bahl, I. J.
Pág. 222 - 229
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Barquinero, C.; Suarez, A.; Herrera, A.; Garcia, J.L.
Pág. 2024 - 2033
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Negra, R.; Ghannouchi, F.M.; Bachtold, W.
Pág. 1390 - 1397
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Cheng, Z. Q.; Cai, Y.; Liu, J.; Zhou, Y.; Lau, K. M.; Chen, K. J.
Pág. 23 - 29
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Darwish, A. M.; Boutros, K.; Luo, B.; Huebschman, B. D.; Viveiros, E.; Hung, H. A.
Pág. 4456 - 4463
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