Inicio  /  Applied Sciences  /  Vol: 10 Par: 6 (2020)  /  Artículo
ARTÍCULO
TITULO

A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

Dalal Fadil    
Vikram Passi    
Wei Wei    
Soukaina Ben Salk    
Di Zhou    
Wlodek Strupinski    
Max C. Lemme    
Thomas Zimmer    
Emiliano Pallecchi    
Henri Happy and Sebastien Fregonese    

Resumen

This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less than 0.5 dB. Hence, this circuit topology shows excellent performance with large broadband performance and a functionality of up to one-third of the transit frequency of the transistor.

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