8   Artículos

 
en línea
Chiara Elfi Spano, Fabrizio Mo, Roberta Antonina Claudino, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini and Marco Vacca    
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room tempera... ver más
Revista: Journal of Low Power Electronics and Applications    Formato: Electrónico

 
en línea
Kitae Lee, Sihyun Kim, Daewoong Kwon and Byung-Gook Park    
Ternary complementary metal-oxide-semiconductor technology has been spotlighted as a promising system to replace conventional binary complementary metal-oxide-semiconductor (CMOS) with supply voltage (VDD) and power scaling limitations. Recently, wafer-l... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Seung-Hyun Lee, Jeong-Uk Park, Garam Kim, Dong-Woo Jee, Jang Hyun Kim and Sangwan Kim    
In this paper, analysis and optimization of surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET) has been discussed with the help of technology computer-aided design (TCAD) simulation. The SCNW TFET features an ultra-thin tunnel laye... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Hsin-Hui Hu, Yan-Wei Zeng and Kun-Ming Chen    
Polycrystalline silicon (poly-Si) thin film transistors (TFT) with a tri-gate fin-like structure and wide drain were designed and simulated to improve gate-induced drain leakage (GIDL), ON-state current, and breakdown voltage. The GIDL of fin-like TFTs (... ver más
Revista: Applied Sciences    Formato: Electrónico

« Anterior     Página: 1 de 1     Siguiente »