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Ivan Shtepliuk
This paper presents a theoretical study on the effects of selected defects (oxygen vacancies and substitutional FeZn atoms) on the structural and electronic properties of a 2D ZnO/graphene heterostructure. Spin-polarized Hubbard- and dispersion-corrected...
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Yang Liu, Bo Zhang, Yinian Feng, Xiaolin Lv, Dongfeng Ji, Zhongqian Niu, Yilin Yang, Xiangyang Zhao and Yong Fan
Frequency multipliers and mixers based on Schottky barrier diodes (SBDs) are widely used in terahertz (THz) imaging applications. However, they still face obstacles, such as poor performance consistency caused by discrete flip-chip diodes, as well as low...
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Runze Chen, Lixin Wang, Hongkai Zhang, Mengyao Cui and Min Guo
The split gate resurf stepped oxide with highly doped epitaxial layer (HDSGRSO) UMOSFET has extremely low on-state resistance, therefore, it can be used in synchronous rectification circuits to replace rectifier diodes to reduce rectification losses. It ...
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He Guan and Shaoxi Wang
Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO2-Al2O3 laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler?Nordheim tunneling became the main ...
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Fengnan Li, Jingwen Zhang, Xiaoliang Wang, Minghui Zhang and Hongxing Wang
Barrier heights of Au on hydrogen-/oxygen-/fluorine-/nitrogen-terminated diamond (H-/O-/F-/N-diamond) have been investigated by X-ray photoelectron spectroscopy. All of the H-/O-/F-/N-diamond surfaces have been formed on different areas of one diamond sa...
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Suzuki, T; Yasui, T; Fujishima, H; Nozokido, T; Araki, M; Boric-Lubecke, O;
Pág. 1649 - 1655
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Wu, Y; Armstrong, B M; Gamble, H S; Hu, Z; Chen, Q; Yang, S; Fusco, V F;
Pág. 641 - 646
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Hesler, J L; Hall, W R; Crowe, T W; Weikle II, R M; Deaver Jr, B S; Bradley
Pág. 653 - 658
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