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Rui Tang, Rui He, Sangmo Kim and Chung Wung Bark
Over the past decades, ferroelectric photovoltaic (FE-PV) systems, which use a homogenous ferroelectric material as a light-absorbing layer, have been studied using ferroelectric oxides. The PV activity of materials can be enhanced by adjusting the bandg...
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Nawishta Jabeen, Ahmad Hussain, Muhammad Adnan Qaiser, Jazib Ali, Abdul Rehman, Nourreddine Sfina, Gharieb A. Ali and Vineet Tirth
Dielectric ceramic capacitors have attained considerable attention due to their energy storage performance in the field of advanced high/pulsed power capacitors. For such a purpose, configurationally disordered composite material engineering, with the su...
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Yuwei Cai, Qingzhu Zhang, Zhaohao Zhang, Gaobo Xu, Zhenhua Wu, Jie Gu, Junjie Li, Jinjuan Xiang and Huaxiang Yin
HfO2-based ferroelectric materials have been widely studied for their application in ferroelectric FETs, which are compatible with conventional CMOS processes; however, problems with the material?s inherent fatigue properties have limited its potential f...
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Deahoon Park, Min Cheol Kim, Minje Kim, Pangun Park and Junghyo Nah
In this work, we report on a flexible triboelectric generator (TEG) with a multilayer polymer structure, consisting of a poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) layer sandwiched by polydimethylsiloxane (PDMS) layers for the performance...
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Zakhar R. Kudrynskyi, Illya V. Mintyanskii, Petro I. Savitskii and Zakhar D. Kovalyuk
Layered van der Waals (vdW) semiconductors show great promise to overcome limitations imposed by traditional semiconductor materials. The synergistic combination of vdW semiconductors with other functional materials can offer novel working principles and...
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Andrey Altynnikov, Roman Platonov, Andrey Tumarkin, Peter K. Petrov and Andrey Kozyrev
A method for forming electromagnetic waves with a tunable nonzero orbital angular momentum (OAM) is proposed. The approach is based on transforming an incident plane wave into a helical one using an electrically tunable ferroelectric lens. It uses high-r...
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Mohammad Nasim Imtiaz Khan and Swaroop Ghosh
Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a toler...
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Hsiao-Hsuan Hsu, Hsiu-Ming Liu and Sheng Lee
In this study, we reveal that the thermal budget of post-metal annealing not only determines the formation of the ferroelectric phase and dipole domain but also the film quality of the gate stack in a metal-ferroelectric-metal capacitor. The higher leaka...
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Kitae Lee, Sihyun Kim, Daewoong Kwon and Byung-Gook Park
Ternary complementary metal-oxide-semiconductor technology has been spotlighted as a promising system to replace conventional binary complementary metal-oxide-semiconductor (CMOS) with supply voltage (VDD) and power scaling limitations. Recently, wafer-l...
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Hugo Hernán Ortiz-Álvarez, Francy Nelly Jiménez-García, Carolina Márquez-Narváez, José Dario Agudelo-Giraldo and Elisabeth Restrepo-Parra
In this work, Monte Carlo simulations of magnetic properties of thin films, including the influence of an external pressure, are presented. These simulations were developed using a Hamiltonian composed by terms that represent the exchange interaction, di...
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