|
|
|
|
|
Hashim A. Al Hassan, Andrew Reiman, Gregory F. Reed, Zhi-Hong Mao and Brandon M. Grainger
|
|
|
|
|
|
|
|
|
|
|
Kenneth F. Galloway, Arthur F. Witulski, Ronald D. Schrimpf, Andrew L. Sternberg, Dennis R. Ball, Arto Javanainen, Robert A. Reed, Brian D. Sierawski and Jean-Marie Lauenstein
Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than...
ver más
|
|
|
|
|
|
|
|
|
|
|
Valerie Little, Kevin F.M. Reed and Kevin F. Smith
-
|
|
|
|
|
|
|
|
|
|
|
Kimberly D. Gwinn, Bonnie H. Ownley, Sharon E. Greene, Miranda M. Clark, Chelsea L. Taylor, Tiffany N. Springfield, David J. Trently, James F. Green, A. Reed, and Susan L. Hamilton
Pág. 493 - 501
|
|
|
|
|
|
|
|
|
|
|
Ravza F. Mavlyanova, Faizulla Kh. Abdullaev, Payzillo Khodjiev, David E. Zaurov, Thomas J. Molnar, Joseph C. Goffreda, Thomas J. Orton, and C. Reed Funk
Pág. 10 - 14
|
|
|
|
|
|
|
|
|
|
|
|
Chen, C.-Y. Duursma, I. M.
Pág. 1351 - 1352
|
|
|
|
|
|
|
|
|
|
|
Smith, V. Kerry; Taylor Jr, Donald H.; Sloan, Frank A.; Johnson, F. Reed; De
Pág. 675 - 687
|
|
|
|
|
|
|
|
|
|
|
Reed, M G; Syverson, P F; Goldschlag, D M
Pág. 482 - 494
|
|
|
|
|
|
|
|
|
|
|
Yao, K; Hudson, R E; Reed, C W; Chen, D; Lorenzelli, F
Pág. 1555 - 1567
|
|
|
|
|
|