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Muyi Wang, Song Wang, Renjie Chen, Mengmeng Zhu, Yunpeng Liu, Haojie Ding, Jun Ren, Tongtong Xuan and Huili Li
All-inorganic perovskite nanocrystals (NCs) have attractive potential for applications in display and lighting fields due to their special optoelectronic properties. However, they still suffer from poor water and thermal stability. In this work, green Cs...
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Dohyun Kim, Keun Man Song, UiJin Jung, Subin Kim, Dong Su Shin and Jinsub Park
In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with different metal-organic (MO) precursors of gallium (Ga), which were grown underneath the active l...
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Zhi Ting Ye, Hong Thai Nguyen, Shih-Wei Feng, Hsiang-Chen Wang and Hwei-Ling Chou
InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral s...
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Thi Tran Anh Tuan, Dong-Hau Kuo, Phuong Thao Cao, Van Sau Nguyen, Quoc-Phong Pham, Vinh Khanh Nghi and Nguyen Phuong Lan Tran
The modeling of p?InxGa1-xN/n?Si hetero junction diodes without using the buffer layer were investigated with the ?top-top? electrode. The p?Mg-GaN and p?Mg-In0.05Ga0.95N were deposited directly on the n?Si (100) wafer by the RF reactive sputtering at 40...
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Sergey Yu. Karpov
A semi-empirical model of carrier recombination accounting for hole localization by composition fluctuations in InGaN alloys is extended to polar and nonpolar quantum-well structures. The model provides quantitative agreement with available data on wavel...
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Sayed Muhammod Baker, Rinku Basak
Pág. 89 ? 94
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M. Rao, N. Newman and S. Ma
Pág. 33 - 36
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Okamoto, K. Inoue, K. Kawakami, Y. Fujita, S. Terazima, M. Tsujimura, A. Kidoguchi, I.
Pág. 575 - 577
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