5   Artículos

 
en línea
Juan M. Carrillo and Carlos A. de la Cruz-Blas    
A bootstrapping technique used to increase the intrinsic voltage gain of a bulk-driven MOS transistor is described in this paper. The proposed circuit incorporates a capacitor and a cutoff transistor to be connected to the gate terminal of a bulk-driven ... ver más
Revista: Journal of Low Power Electronics and Applications    Formato: Electrónico

 
en línea
Egor Kiselev,Tetyana Krytska,Nina Stroiteleva,Konstantin Turyshev     Pág. 46 - 52
The problem of constructing a thermal sensor based on the technology of microelectromechanical systems is solved by structural and circuit integration of capacitance-dependent and thermomechanical parts. For this, the use of a MOS transistor (capacitance... ver más
Revista: Eastern-European Journal of Enterprise Technologies    Formato: Electrónico

 
usuarios registrados
Enz, C     Pág. 342 - 359

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