4 Artículos

Factor Design for the Oxide Etching Process to Reduce Edge Particle Contamination in Capacitively Coupled Plasma Etching Equipment

Acceso

en línea

Ching-Ming Ku and Stone Cheng

During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers. To reduce edge particle contamination in plasma etching equipme... ver más

Revista: Applied Sciences Formato: Electrónico

Tabla de contenido: Vol: 12 Num: 0 Par: 11 Año: 2022

A study of an electrochromic device based on Ni(OH)2/PVA film with the mesh-like silver counter electrode

Acceso

en línea

Valerii Kotok,Vadym Kovalenko Pág. 49 - 55

The study is devoted to the development and testing of the electrochromic device based on Ni(OH)2/PVA (polyvinyl alcohol) composite and mesh counter-electrode. A copper wire with a layer of electroplated silver layer is proposed as a mesh material. Glass... ver más

Revista: Eastern-European Journal of Enterprise Technologies Formato: Electrónico

Tabla de contenido: Vol: 5 Num: 6 Par: 0 Año: 2019

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