12   Artículos

 
en línea
Shaahin Angizi, Naima Ahmed Fahmi, Deniz Najafi, Wei Zhang and Deliang Fan    
In this work, we present an efficient Processing in MRAM-Accelerated De Bruijn Graph-based DNA Assembly platform, named PANDA, based on an optimized and hardware-friendly genome assembly algorithm. PANDA is able to assemble large-scale DNA sequence datas... ver más
Revista: Journal of Low Power Electronics and Applications    Formato: Electrónico

 
en línea
Shubin Zhang, Peifang Dai, Ning Li and Yanbo Chen    
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promisi... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Atousa Jafari, Christopher Münch and Mehdi Tahoori    
Computing data-intensive applications on the von Neumann architecture lead to significant performance and energy overheads. The concept of computation in memory (CiM) addresses the bottleneck of von Neumann machines by reducing the data movement in the c... ver más
Revista: Journal of Low Power Electronics and Applications    Formato: Electrónico

 
en línea
Mohammad Nasim Imtiaz Khan, Shivam Bhasin, Bo Liu, Alex Yuan, Anupam Chattopadhyay and Swaroop Ghosh    
Emerging Non-Volatile Memories (NVMs) such as Magnetic RAM (MRAM), Spin-Transfer Torque RAM (STTRAM), Phase Change Memory (PCM) and Resistive RAM (RRAM) are very promising due to their low (static) power operation, high scalability and high performance. ... ver más
Revista: Journal of Low Power Electronics and Applications    Formato: Electrónico

 
en línea
Mohammad Nasim Imtiaz Khan, Chak Yuen Cheng, Sung Hao Lin, Abdullah Ash-Saki and Swaroop Ghosh    
We use commercial magnetic memory to realize morphable security primitives, a Physically Unclonable Function (PUF) and a True Random Number Generator (TRNG). The PUF realized by manipulating the write time and the TRNG is realized by tweaking the number ... ver más
Revista: Journal of Low Power Electronics and Applications    Formato: Electrónico

 
en línea
Mohammad Nasim Imtiaz Khan and Swaroop Ghosh    
Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a toler... ver más
Revista: Journal of Low Power Electronics and Applications    Formato: Electrónico

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