|
|
|
|
|
Jee-Hun Jeong, Ogyun Seok and Ho-Jun Lee
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed. The optimal BPW doping concentr...
ver más
|
|
|
|
|