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Mahesh B. Manandhar and Mohammad A. Matin
The use of Aluminum Gallium Nitride (AlGaN) as a power switching device material has been a promising topic of research in recent years. Along with Silicon Carbide (SiC) and Gallium Nitride (GaN), AlGaN is categorized as a Wideband Gap (WBG) material wit...
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Jingpu Wang, Xin Song and Yatao Ma
Non-orthogonal multiple access (NOMA) has become a promising technology for 5G. With the support of effective resource allocation algorithms, it can improve the spectrum resource utilization and system throughput. In this article, a new resource allocati...
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Zhun Meng, Yi-Feng Wang, Liang Yang and Wei Li
A high frequency dual-buck full-bridge inverter for small power renewable energy applications is proposed in this paper. The implementation of the wide band gap SiC (Silicon Carbide) power device contributes to the high switching frequency of 400 kHz. Th...
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