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Chunyan Song, Xuelin Yang, Panfeng Ji, Jun Tang, Shan Wu, Yue Xu, Ali Imran, Maojun Wang, Zhijian Yang, Fujun Xu, Xinqiang Wang, Weikun Ge and Bo Shen
The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are...
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