|
|
|
|
|
Jörg P. Kotthaus
An acoustoelectric approach to neuron function is proposed that combines aspects of the widely accepted electrical-circuit-based Hodgkin?Huxley model for the generation and propagation of action potentials via electric polarization with mechanical models...
ver más
|
|
|
|
|
|
|
|
|
|
|
Kangil Kim, Jae Keun Lee, Seung Ju Han and Sangmin Lee
Silicon nanowires are widely used for sensing applications due to their outstanding mechanical, electrical, and optical properties. However, one of the major challenges involves introducing silicon-nanowire arrays to a specific layout location with repro...
ver más
|
|
|
|
|
|
|
|
|
|
|
Kristina A. Malsagova, Tatyana O. Pleshakova, Rafael A. Galiullin, Ivan D. Shumov, Andrey F. Kozlov, Tatyana S. Romanova, Vladimir P. Popov, Alexander V. Glukhov, Vladimir A. Konev, Alexander I. Archakov and Yuri D. Ivanov
Herein, we have demonstrated highly sensitive real-time biospecific detection of a protein marker of hepatitis C?the core antigen of hepatitis C virus (HCVcoreAg)?using a nanowire (NW) biosensor. The primary element of the NW-biosensor is a chip with p-t...
ver más
|
|
|
|
|
|
|
|
|
|
|
Xiaochun Wang, Meicheng Fu, Heng Yang, Jiali Liao and Xiujian Li
We experimentally measured the femtosecond pulse transmission through a silicon-on-insulator (SOI) nanowire waveguide under different temperatures and input pulse energy with a cross-correlation frequency-resolved optical gating (XFROG) measurement setup...
ver más
|
|
|
|
|
|
|
|
|
|
|
Soohyun Kim, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi and Jae Woo Lee
The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatur...
ver más
|
|
|
|
|
|
|
|
|
|
|
Oves Badami, Cristina Medina-Bailon, Salim Berrada, Hamilton Carrillo-Nunez, Jaeyhun Lee, Vihar Georgiev and Asen Asenov
The use of bulk effective masses in simulations of the modern-day ultra-scaled transistor is erroneous due to the strong dependence of the band structure on the cross-section dimensions and shape. This has to be accounted for in transport simulations due...
ver más
|
|
|
|
|
|
|
|
|
|
|
Jie Li, Wentao Yu, Deyin Zheng, Xin Zhao, Chang-Hwan Choi and Guangyi Sun
In this paper, we report a simple fabrication process of whole Teflon superhydrophobic surfaces, featuring high-aspect-ratio (>20) nanowire structures, using a hot embossing process. An anodic aluminum oxide (AAO) membrane is used as the embossing mol...
ver más
|
|
|
|
|
|
|
|
|
|
|
Rion Parsons, Asman Tamang, Vladislav Jovanov, Veit Wagner and Dietmar Knipp
The optics of axial silicon nanowire solar cells is investigated and compared to silicon thin-film solar cells with textured contact layers. The quantum efficiency and short circuit current density are calculated taking a device geometry into account, wh...
ver más
|
|
|
|
|
|