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Atabek E. Atamuratov, Mahkam M. Khalilloev, Ahmed Yusupov, A. J. García-Loureiro, Jean Chamberlain Chedjou and Kyamakya Kyandoghere
In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide?semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on ...
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