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Dae-Seop Byeon, Choonghee Cho, Dongmin Yoon, Yongjoon Choi, Kiseok Lee, Seunghyun Baik and Dae-Hong Ko
Conventional Si or SiGe epitaxy via chemical vapor deposition is performed at high temperatures with a large amount of hydrogen gas using silane (SiH4) or dichlorosilane (SiCl2H2) precursors. These conventional precursors show low growth rates at low tem...
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