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Chiara Elfi Spano, Fabrizio Mo, Roberta Antonina Claudino, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini and Marco Vacca
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room tempera...
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Seung-Hyun Lee, Jeong-Uk Park, Garam Kim, Dong-Woo Jee, Jang Hyun Kim and Sangwan Kim
In this paper, analysis and optimization of surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET) has been discussed with the help of technology computer-aided design (TCAD) simulation. The SCNW TFET features an ultra-thin tunnel laye...
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Garam Kim, Jang Hyun Kim, Jaemin Kim and Sangwan Kim
This work can be applied to analyze and reduce the WFV effect of TFETs.
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