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Jeong-Geun Kim and Kang-Hee Lee
In this paper, a 4-bit digital step attenuator using 0.25 µm GaN HEMT technology for wideband radar systems is presented. A switched-path attenuator topology with resistive T-type attenuators and double-pole double-throw (DPDT) switches was used to achie...
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M. Bakowski, J. Lang, J-K. Lim, J. Hellén, T.M.J. Nilsson, B. Schodt, R. Poder, I. Belov, P. Leisner
Pág. 157 - 165
The RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. T...
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Huy Hoang Nguyen, Duy Manh Luong and Gia Duong Bach
The power amplifier (PA) and low-noise amplifier (LNA) are the most critical components of transceiver systems including radar, mobile communications, satellite communications, etc. While the PA is the key component of the transmitter (TX), the LNA is th...
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Loizos Efthymiou, Gianluca Camuso, Giorgia Longobardi, Terry Chien, Max Chen and Florin Udrea
With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode...
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Ma, B. Y.; Bergman, J.; Chen, P.; Hacker, J. B.; Sullivan, G.; Nagy, G.; Brar, B.
Pág. 4448 - 4455
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Kawano, Y.; Nakasha, Y.; Yokoo, K.; Masuda, S.; Takahashi, T.; Hirose, T.; Oishi, Y.; Hamaguchi, K.
Pág. 4489 - 4497
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Kaper, V.S.; Thompson, R.M.; Prunty, T.R.; Shealy, J.R.
Pág. 55 - 65
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Chen, P.-Y. Huang, T.-W. Wang, H. Wang, Y.-C. Chen, C.-H. Chao, P.-C.
Pág. 1414 - 1424
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Chen, I.-J. Wang, H. Hsu, P.
Pág. 2461 - 2468
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Sano, K. Murata, K. Kitabayashi, H. Sugitani, S. Sugahara, H. Enoki, T.
Pág. 2548 - 2554
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