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I.-J. Park, S.-Y. Cha, M. Kang, Y.-S. So, H.-G. Go, S.-P. Mun, K.-S. Ryu, and H.-K. Jang
Pág. 977 - 982
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G.-A. Park, S.-R. Ahn, Y.-J. Lee, H.-J. Shin, M.-J. Park, S.-J. Kim
Pág. 1869 - 1883
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Jung, S.-C.; Park, H.-C.; Kim, M.-S.; Ahn, G.; Van, J.-H.; Hwangbo, H.; Park, C.-S.; Park, S.-K.; Yang, Y.
Pág. 52 - 59
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Ryu, H.-G. Park, J.-M. Kim, K.-K. Choi, Y.-K.
Pág. 267 - 273
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Sim, D-G; Park, R-H
Pág. 52 - 55
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Sim, D-G; Park, R-H; Kim, R-C; Lee, S U; Kim, I-C
Pág. 1 - 18
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Im, G.-H. Kang, K.-M. Park, C.-J.
Pág. 959 - 973
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Sim, D-G; Park, R-H
Pág. 475 - 482
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Sim, D-G; Kwon, O-K; Park, R-H
Pág. 425 - 428
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Sim, D-G; Jeong, S-Y; Lee, D-H; Park, R-H; Kim, R-C; Lee, S U; Kim, I C
Pág. 429 - 434
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