6   Artículos

 
en línea
Xiaolei Liu, Kan Wang, Yuru He, Yang Ming and Hao Wang    
To extend initial ignition-related fire prevention in ship engine room, this work presents a case study of marine diesel leakage for identifying accidental ignition by hot surface. Based on a self-designed experimental platform, a full-scale innovative e... ver más
Revista: Journal of Marine Science and Engineering    Formato: Electrónico

 
en línea
Muhammad Sanaullah, Xiuquan Wang, Sajid Rashid Ahmad, Kamran Mirza, Muhammad Qasim Mahmood and Muhammad Kamran    
The fate of agriculture in Pakistan is predominantly concerned with excessive water mining threats to the subsurface water resources. The current study integrates the Visual MODFLOW-2000 application to estimate the water balance of an aquifer bounded by ... ver más
Revista: Water    Formato: Electrónico

 
en línea
Mauro Menichelli, Marco Bizzarri, Maurizio Boscardin, Mirco Caprai, Anna Paola Caricato, Giuseppe Antonio Pablo Cirrone, Michele Crivellari, Ilaria Cupparo, Giacomo Cuttone, Silvain Dunand, Livio Fanò, Omar Hammad Alì, Maria Ionica, Keida Kanxheri, Matthew Large, Giuseppe Maruccio, Anna Grazia Monteduro, Francesco Moscatelli, Arianna Morozzi, Andrea Papi, Daniele Passeri, Marco Petasecca, Silvia Rizzato, Alessandro Rossi, Andrea Scorzoni, Leonello Servoli, Cinzia Talamonti, Giovanni Verzellesi and Nicolas WyrschaddShow full author listremoveHide full author list    
Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide varie... ver más
Revista: Instruments    Formato: Electrónico

 
en línea
Chunyan Song, Xuelin Yang, Panfeng Ji, Jun Tang, Shan Wu, Yue Xu, Ali Imran, Maojun Wang, Zhijian Yang, Fujun Xu, Xinqiang Wang, Weikun Ge and Bo Shen    
The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are... ver más
Revista: Applied Sciences    Formato: Electrónico

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