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Yongqiang Pan, Huan Liu, Zhuoman Wang, Jinmei Jia and Jijie Zhao
SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and...
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