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Baek-Ju Lee, Kyu-Beom Lee, Min-Ho Cheon, Dong-Won Seo and Jae-Wook Choi
In this study, we conducted research on manufacturing molybdenum (Mo) thin films by a thermal atomic layer deposition method using solid MoO2Cl2 as a precursor. Mo thin films are widely used as gate electrodes and electrodes in metal-oxide semiconductor ...
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Christian Dussarrat, Nicolas Blasco, Wontae Noh, Jooho Lee, Jamie Greer, Takashi Teramoto, Sunao Kamimura, Nicolas Gosset and Takashi Ono
The thermal atomic layer deposition (ThALD) of yttrium oxide (Y2O3) was developed using the newly designed, liquid precursor, Y(EtCp)2(iPr2-amd), as the yttrium source in combination with different oxygen sources, such as ozone, water and even molecular ...
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Robert Müller, Lilit Ghazaryan, Paul Schenk, Sabrina Wolleb, Vivek Beladiya, Felix Otto, Norbert Kaiser, Andreas Tünnermann, Torsten Fritz and Adriana Szeghalmi
High-density ruthenium (Ru) thin films were deposited using Ru(EtCp)2 (bis(ethylcyclopentadienyl)ruthenium) and oxygen by thermal atomic layer deposition (ALD) and compared to magnetron sputtered (MS) Ru coatings. The ALD Ru film growth and surface rough...
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