|
|
|
|
|
Shubin Zhang, Peifang Dai, Ning Li and Yanbo Chen
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promisi...
ver más
|
|
|
|
|
|
|
|
|
|
|
Prashanth Barla, Hemalatha Shivarama, Ganesan Deepa and Ujjwal Ujjwal
Hybrid magnetic tunnel junction/complementary metal oxide semiconductor (MTJ/CMOS) circuits based on in-memory-computation (IMC) architecture is considered as the next-generation candidate for the digital integrated circuits. However, the energy consumpt...
ver más
|
|
|
|
|
|
|
|
|
|
|
Gunnar Suchaneck, Evgenii Artiukh, Nikolai A. Sobolev, Eugene Telesh, Nikolay Kalanda, Dmitry A. Kiselev, Tatiana S. Ilina and Gerald Gerlach
Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital conv...
ver más
|
|
|
|
|
|
|
|
|
|
|
Atousa Jafari, Christopher Münch and Mehdi Tahoori
Computing data-intensive applications on the von Neumann architecture lead to significant performance and energy overheads. The concept of computation in memory (CiM) addresses the bottleneck of von Neumann machines by reducing the data movement in the c...
ver más
|
|
|
|
|
|