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Yuqing Mao, Yoann Charlon, Yves Leduc and Gilles Jacquemod
Although Moore?s Law reaches its limits, it has never applied to analog and RF circuits. For example, due to the short channel effect (SCE), drain-induced barrier lowering (DIBL), and sub-threshold slope (SS)?, longer transistors are required to implemen...
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Haoji Wan, Xianyun Liu, Xin Su, Xincheng Ren, Shengting Luo and Qi Zhou
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Hsin-Chia Yang and Sung-Ching Chi
NFinFET transistors with various fin widths (110 nm, 115 nm, and 120 nm) are put into measurements, and the data are collected. By using the modified model, the measure data is fitted. Several parameters in the formula of modified model are determined to...
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Soohyun Kim, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi and Jae Woo Lee
The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatur...
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Atabek E. Atamuratov, Mahkam M. Khalilloev, Ahmed Yusupov, A. J. García-Loureiro, Jean Chamberlain Chedjou and Kyamakya Kyandoghere
In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide?semiconductor interface of field effect transistors. The influence of these defects with different sizes and shapes on ...
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Hyeonjae Won, Ilsik Ham, Youngseok Jeong and Myounggon Kang
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