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Samra Saleem, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed and Muhammad Asghar
To realize practical applications of nanowire-based devices, it is critical, yet challenging, to control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that controlled wurtzite and zincblende phases of InAs nanowires can ...
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Elena Alexandra Serban, Aditya Prabaswara, Justinas Palisaitis, Per Ola Åke Persson, Lars Hultman, Jens Birch and Ching-Lien Hsiao
Selective-area grown, catalyst-free GaN nanorod (NR) arrays grown on Si substrates have been realized using liquid-target reactive magnetron sputter epitaxy (MSE). Focused ion beam lithography (FIBL) was applied to pattern Si substrates with TiNx masks. ...
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