3   Artículos

 
en línea
Shubin Zhang, Peifang Dai, Ning Li and Yanbo Chen    
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promisi... ver más
Revista: Applied Sciences    Formato: Electrónico

 
en línea
Raffaele Giordano, Dario Barbieri, Sabrina Perrella and Roberto Catalano    
The usage of SRAM-based Field Programmable Gate Arrays on High Energy Physics detectors is mostly limited by the sensitivity of these devices to radiation-induced upsets in their configuration. These effects may alter the functionality until the next rec... ver más
Revista: Instruments    Formato: Electrónico

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