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M. Bakowski, J. Lang, J-K. Lim, J. Hellén, T.M.J. Nilsson, B. Schodt, R. Poder, I. Belov, P. Leisner
Pág. 157 - 165
The RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. T...
ver más
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Sudow, M.; Andersson, K.; Billstrom, N.; Grahn, J.; Hjelmgren, H.; Nilsson, J.; Nilsson, P.-.; Stahl, J.; Zirath, H.; Rorsman, N.
Pág. 4072 - 4078
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D Gavier-Widen, C Brojer, HH Dietz, L Englund, AS Hammer, KO Hedlund, C Hard af Segerstad, K Nilsson, N Nowotny, V Puurula, P Thoren, H Uhlhorn, H Weissenbock, E Agren, and B Klingeborn
Pág. 305 - 312
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Nilsson, M; Åman, P; Härkönen, H; Hallmans, G; Knudsen, K E B
Pág. 143 - 148
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