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Enrico Giulotto and Mario Geddo
Micro-Raman mapping can provide detailed information about the strain distribution in GaAsN/GaASN:H planar heterostructures.
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Q. Li, H. H. Tan, and C. Jagadish
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H. Chouaib, M. E. Murtagh, V. Guènebaut, S. Ward, P. V. Kelly, M. Kennard, Y. M. Le Vaillant, M. G. Somekh, M. C. Pitter, and S. D. Sharples
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Jun Shao, Wei Lu, Fangyu Yue, Xiang Lü, Wei Huang, Zhifeng Li, Shaoling Guo, and Junhao Chu
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Gaskill, D. K.; Holm, R. T.; Glembocki, O. J.
Pág. 4341 - 4343
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