|
|
|
|
|
Samra Saleem, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed and Muhammad Asghar
To realize practical applications of nanowire-based devices, it is critical, yet challenging, to control crystal structure growth of III-V semiconductor nanowires. Here, we demonstrate that controlled wurtzite and zincblende phases of InAs nanowires can ...
ver más
|
|
|
|
|
|
|
|
|
|
|
Dae-Seop Byeon, Choonghee Cho, Dongmin Yoon, Yongjoon Choi, Kiseok Lee, Seunghyun Baik and Dae-Hong Ko
Conventional Si or SiGe epitaxy via chemical vapor deposition is performed at high temperatures with a large amount of hydrogen gas using silane (SiH4) or dichlorosilane (SiCl2H2) precursors. These conventional precursors show low growth rates at low tem...
ver más
|
|
|
|
|
|
|
|
|
|
|
Markus Scherrer, Noelia Vico Triviño, Svenja Mauthe, Preksha Tiwari, Heinz Schmid and Kirsten E. Moselund
It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material. The monolithic integration of the III-V material is ultimately desirable for scalable integrat...
ver más
|
|
|
|
|
|
|
|
|
|
|
Minghui Gu, Chen Li, Yuanfeng Ding, Kedong Zhang, Shunji Xia, Yusheng Wang, Ming-Hui Lu, Hong Lu and Yan-Feng Chen
Two-dimensional (2D) featured antimonene has been directly grown on sapphire substrates by molecular beam epitaxy. The van der Waals epitaxy growth can be promoted through temperature control in the growth window. The competing mechanism between 2D and t...
ver más
|
|
|
|
|
|
|
|
|
|
|
Elena Alexandra Serban, Aditya Prabaswara, Justinas Palisaitis, Per Ola Åke Persson, Lars Hultman, Jens Birch and Ching-Lien Hsiao
Selective-area grown, catalyst-free GaN nanorod (NR) arrays grown on Si substrates have been realized using liquid-target reactive magnetron sputter epitaxy (MSE). Focused ion beam lithography (FIBL) was applied to pattern Si substrates with TiNx masks. ...
ver más
|
|
|
|
|
|
|
|
|
|
|
Sabina Kuprenaite, Vincent Astié, Samuel Margueron, Cyril Millon, Jean-Manuel Decams, Zita Saltyte, Pascal Boulet, Valentina Plausinaitiene, Adulfas Abrutis and Ausrine Bartasyte
Precision control of resistivity/conductivity of LaNiO3 (LNO) films is essential for their integration as electrodes in the functional heterostructures. This becomes possible if the relationship between processing parameters–composition–struc...
ver más
|
|
|
|
|
|
|
|
|
|
|
Chih-Kai Hu, Chun-Jung Chen, Ta-Chin Wei, Tomi T. Li, Ching-Chiun Wang and Chih-Yung Huang
A numerical procedure was performed to simplify the complicated mechanism of an epitaxial thin-film growth process. In this study, three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism. The me...
ver más
|
|
|
|
|
|
|
|
|
|
|
Raphaël Boichot, Danying Chen, Frédéric Mercier, Francis Baillet, Gaël Giusti, Thomas Coughlan, Mikhail Chubarov and Michel Pons
This study aims to present the interest of using a design of experiments (DOE) approach for assessing, understanding and improving the hydride vapor phase epitaxy (HVPE) process, a particular class of chemical vapor deposition (CVD) process. The case of ...
ver más
|
|
|
|
|
|
|
|
|
|
|
Chih-Kai Hu, Chun-Jung Chen, Ta-Chin Wei, Tomi T. Li, Chih-Yung Huang, Chu-Li Chao and Yi-Jiun Lin
A numerical verification procedure and the effects of operating conditions in a large, vertical, and close-spaced reactor for metalorganic chemical vapor deposition are investigated through simulation and analysis. A set of epitaxy experiments are presen...
ver más
|
|
|
|
|
|
|
|
|
|
|
Stuart Reid and Iain W. Martin
The first detections of gravitational waves, GW150914 and GW151226, were associated with the coalescence of stellar mass black holes, heralding the opening of an entirely new way to observe the Universe. Many decades of development were invested to achie...
ver más
|
|
|
|
|
|