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Yanfei Lv, Feng Huang, Luxi Zhang, Jiaxin Weng, Shichao Zhao and Zhenguo Ji
Tungsten disulfide (WS2) monolayer is a direct band gap semiconductor. The growth of WS2 monolayer hinders the progress of its investigation. In this paper, we prepared the WS2 monolayer through chemical vapor transport deposition. This method makes it e...
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Shichao Zhao, Jiaxin Weng, Shengzhong Jin, Yanfei Lv and Zhenguo Ji
Molybdenum disulfide (MoS2) layers show excellent optical and electrical properties and have many potential applications. However, the growth of high-quality MoS2 layers is a major bottleneck in the development of MoS2-based devices. In this paper, we re...
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Shengzhong Jin, Shichao Zhao, Jiaxin Weng and Yanfei Lv
Molybdenum disulphide (MoS2) monolayer is a two-dimensional semiconductor material with potential applications in nano electronic devices. However, it is still a challenge to reproducibly synthesize single layer MoS2 in high quality. Herein, we report th...
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Yanfei Lv, Xijun Wu, Daxiong Wu, Dexuan Huo and Shichao
Pág. 174 - 178
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