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en línea
He Guan and Shaoxi Wang    
Au-Pt-Ti/high-k/n-InAlAs metal-oxide-semiconductor (MOS) capacitors with HfO2-Al2O3 laminated dielectric were fabricated. We found that a Schottky emission leakage mechanism dominates the low bias conditions and Fowler?Nordheim tunneling became the main ... ver más
Revista: Coatings    Formato: Electrónico

 
en línea
Igor Nevliudov, Valeriy Gurin, Dmytro Gurin     Pág. 57 - 61
The subject of the study is oxide-semiconductor capacitors, which are widely used in the manufacture of electronic equipment. The goal of the study is to determine the main causes of failures of oxide-semiconductor capacitors at the production and operat... ver más

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