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M. Bakowski, J. Lang, J-K. Lim, J. Hellén, T.M.J. Nilsson, B. Schodt, R. Poder, I. Belov, P. Leisner
Pág. 157 - 165
The RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. T...
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T.-H. Lim, M.-S. Kim, J.-H. Jang, D.-H. Lee, J.-K. Park, H.-N. Youn, J.-B. Lee, S.-Y. Park, I.-S. Choi, and C.-S. Song
Pág. 89 - 94
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J Y Han, K D Song, J H Shin, B K Han, T S Park, H J Park, J K Kim, H S Lillehoj, J M Lim, H Kim
Pág. 1432 - 1438
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Lim, J-H; Wu, J K; Singh, S; Narasimhalu, D
Pág. 846 - 850
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Oh, H-S; Lim, J-K; Han, S-Y
Pág. 549 - 558
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