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Teng Jiao, Zeming Li, Wei Chen, Xin Dong, Zhengda Li, Zhaoti Diao, Yuantao Zhang and Baolin Zhang
To obtain high-quality n-type doped ß-Ga2O3 films, silane was used as an n-type dopant to grow Si-doped ß-Ga2O3 films on (100) ß-Ga2O3 substrates by metal-organic chemical vapor deposition (MOCVD). The electron concentrations of the Si-doped ß-Ga2O3 film...
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