SPECIAL ISSUE ON SILICON-BASED RF AND MICROWAVE INTEGRATED CIRCUITS - PAPERS - An MOS Transistor Model for RF IC Design Valid in All Regions of Operation (Invited Paper)

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Resumen

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PÁGINAS

pp. 342 - 359

NÚMERO

Volumen: 50 Número: 1(2) Parte: 0 (2002)

MATERIAS

INGENIERÍA Y CONSTRUCCIÓN CIVIL

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