GaN Microwave Electronics

Artículos similares

GaN-Based High Electron-Mobility Transistors for Microwave and RF Control Applications

Acceso

Drozdovski, N. V. Caverly, R. H. Pág. 4 - 8

Revista: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Microwave Technologies: Active Components and ICs - Study of Self-Heating Effects, Temperature-Dependent Modeling, and Pulsed Load-Pull Measurements on GaN HEMTs

Acceso

Nuttinck, S; Gebara, E; Laskar, J; Harris, H M Pág. 2413 - 2420

Revista: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

Microwave Technologies: Active Components and ICs - High-Power Broad-Band AlGaN/GaN HEMT MMICs on SiC Substrates

Acceso

Green, B M; Tilak, V; Lee, S; Kim, H; Smart, J A; Webb, K J; Shealy, J R; Pág. 2486 - 2493

Revista: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

MINI-SPECIAL ISSUE ON LOW-POWER/LOW-NOISE TECHNOLOGIES FOR MOBILE WIRELESS COMMUNICATIONS - MINI-SPECIAL ISSUE PAPERS - Low Flicker-Noise GaN/AlGaN Heterostructure Field-Effect Transistors for Microwave Communications

Acceso

Balandin, A; Morozov, S V; Cai, S; Li, R; Wang, K L; Wijeratne, G; Viswana Pág. 1413 - 1417

Revista: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES