Resumen
The modeling of p?InxGa1-xN/n?Si hetero junction diodes without using the buffer layer were investigated with the ?top-top? electrode. The p?Mg-GaN and p?Mg-In0.05Ga0.95N were deposited directly on the n?Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p?InxGa1-xN/n?Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm-3 and µ = 145 cm2/V·s for p?GaN film, Np = 2.53 × 1017 cm-3, and µ = 45 cm2/V·s for p?InGaN film. By the I?V measurement at RT, the leakage currents at -5 V and turn-on voltages were found to be 9.31 × 10-7 A and 2.4 V for p?GaN/n?Si and 3.38 × 10-6 A and 1.5 V for p?InGaN/n?Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm-2 for p?GaN/n?Si and p?InGaN/n?Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs? and Norde methods, and other parameters of diodes were also determined and compared.