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Inicio  /  Applied Sciences  /  Vol: 7 Núm: 8 Par: August (2017)  /  Artículo
ARTÍCULO
TITULO

Amorphous InGaZnO Thin Film Transistor Fabricated with Printed Silver Salt Ink Source/Drain Electrodes

Caigui Yang    
Zhiqiang Fang    
Honglong Ning    
Ruiqiang Tao    
Jianqiu Chen    
Yicong Zhou    
Zeke Zheng    
Rihui Yao    
Lei Wang    
Junbiao Peng and Yongsheng Song    

Resumen

Recently, amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs) with inkjet printing silver source/drain electrodes have attracted great attention, especially for large area and flexible electronics applications. The silver ink could be divided into two types: one is based on silver nanoparticles, and the other is silver salt ink. Organic materials are essential in the formulation of nanoparticle ink as a strong disperse stabilizer to prevent agglomeration of silver particles, but will introduce contact problems between the silver electrodes and the a-IGZO active layer after annealing, which is difficult to eliminate and leads to poor device properties. Our experiment is aimed to reduce this effect by using a silver salt ink without stabilizer component. With optimized inkjet printing conditions, the high performance of a-IGZO TFT was obtained with a mobility of 4.28 cm2/V·s and an on/off current ratio over 106. The results have demonstrated a significant improvement for a-IGZO TFTs with directly printed silver electrodes. This work presents a promising platform for future printed electronic applications.

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Revista: Coatings