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Inicio  /  Applied Sciences  /  Vol: 13 Par: 2 (2023)  /  Artículo
ARTÍCULO
TITULO

Enhancing the UV Response of All-Inorganic Perovskite Photodetectors by Introducing the Mist-CVD-Grown Gallium Oxide Layer

Zeyulin Zhang    
Yanshuang Ba    
Dazheng Chen    
Pengru Yan    
Qingwen Song    
Yuming Zhang    
Weidong Zhu    
Chunfu Zhang and Yue Hao    

Resumen

All-inorganic perovskites, with their low-cost, simple processes and superior heat stability, have become potential candidate materials for photodetectors (PDs). However, they have no representative responsivity in the deep-ultraviolet (UV) wavelength region. As a new-generation semiconductor, gallium oxide (Ga2O3), which has an ultrawide bandgap, is appropriate for solar-blind (200 nm?280 nm) deep-UV detection. In this work, ultrawide-bandgap Ga2O3 was introduced into an inorganic perovskite device with a structure of sapphire/ß-Ga2O3/Indium Zinc Oxide (IZO)/CsPbBr3. The performance of this perovskite PD was obviously enhanced in the deep UV region. A low-cost, vacuum-free Mist-CVD was used to realize the epitaxial growth of ß-Ga2O3 film on sapphire. By introducing the Ga2O3 layer, the light current of this heterojunction PD was obviously enhanced from 10-8 to 10-7, which leds its detectivity (D*) to reach 1.04 × 1012 Jones under a 254 nm light illumination with an intensity of 500 µW/cm2 at a 5 V bias.

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