Redirigiendo al acceso original de articulo en 15 segundos...
Inicio  /  Applied Sciences  /  Vol: 7 Núm: 8 Par: August (2017)  /  Artículo
ARTÍCULO
TITULO

Probing Structures of Interfacial 1-Butyl-3-Methylimidazolium Trifluoromethanesulfonate Ionic Liquid on Nano-Aluminum Oxide Surfaces Using High-Pressure Infrared Spectroscopy

Hai-Chou Chang    
Teng-Hui Wang and Christopher M. Burba    

Resumen

The interactions between 1-butyl-3-methylimidazolium trifluoromethanesulfonate ([BMIM][TFS]) and nano-Al2O3 are studied using high-pressure infrared spectroscopy. The thickness of the [BMIM][TFS] interfacial layer on the aluminum oxide are adjusted by controlling the number of washes with ethanol. In contrast to the results obtained under ambient pressure, local structures of both the cations and anions of [BMIM][TFS] are disturbed under high pressures. For example, bands due to C-H stretching motions display remarkable blue-shifts in frequency as the pressure of the [BMIM][TFS]/Al2O3 composites is increased to 0.4 GPa. The bands then undergo mild shifts in frequency upon further compression. The discontinuous jump occurring around 0.4 GPa becomes less obvious when the amount of ionic liquid on the Al2O3 is reduced by washing with ethanol. The nano-Al2O3 with surfaces may weaken the cation/anion interactions in the interfacial area as a result of the formation of pressure-enhanced Al2O3/ionic liquid interactions under high pressures.

 Artículos similares

       
 
Dmitry Sukhanov and Kseniya Zavyalova    
A method for solving the inverse problem for reconstructing the spatial distribution of dielectric permittivity from the results of multi-angle transmission broadband radiosounding is proposed. The method is based on inverse wave propagation. The average... ver más
Revista: Applied Sciences

 
Igor Nevliudov, Valeriy Gurin, Dmytro Gurin     Pág. 57 - 61
The subject of the study is oxide-semiconductor capacitors, which are widely used in the manufacture of electronic equipment. The goal of the study is to determine the main causes of failures of oxide-semiconductor capacitors at the production and operat... ver más