Resumen
Molybdenum disulphide (MoS2) monolayer is a two-dimensional semiconductor material with potential applications in nano electronic devices. However, it is still a challenge to reproducibly synthesize single layer MoS2 in high quality. Herein, we report the growth of monolayer of MoS2 on the SiO2/Si substrate with manganese heterogeneous nucleation. It was shown that the Mn promotes the growth of monolayer MoS2 via heterogeneous nucleation. The growth temperature range expanded two-fold, the nucleation density increased as well. The monolayer prepared in the presence of Mn exhibits a unique red emission peak at 732 nm at room temperature compared to the sample in the absence of Mn.