Resumen
Al4SiC4 powder with high purity was synthesized using the powder mixture of aluminum (Al), silicon (Si), and carbon (C) at 1800 °C in argon. Their oxidation behavior and mechanism in a MgO-C-Al4SiC4 system was investigated at 1400?1600 °C. XRD, SEM, and energy dispersive spectrometry (EDS) were adopted to analyze the microstructure and phase evolution. The results showed that the composition of oxidation products was closely related to the atom diffusion velocity and the compound oxide layer was generated on Al4SiC4 surface. In addition, the effect of different CO partial pressure on the oxidation of Al4SiC4 crystals was also studied by thermodynamic calculation. This work proves the great potential of Al4SiC4 in improving the MgO-C materials.