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Inicio  /  Computation  /  Vol: 4 Núm: 1 Par: March (2016)  /  Artículo
ARTÍCULO
TITULO

Influence of the Localization of Ge Atoms within the Si(001)(4 × 2) Surface Layer on Semicore One-Electron States

Olha I. Tkachuk    
Maria I. Terebinskaya    
Victor V. Lobanov and Alexei V. Arbuznikov    

Resumen

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