Resumen
Amorphous SiO2 thin films are one of the two components of the highly reflective mirror coatings of gravitational-wave detectors. For this study, layers of amorphous SiO2 on crystalline Si substrates were produced by ion-beam sputtering (IBS), using accelerated neutralized argon ions as sputtering particles, as is the case for the actual mirror coatings of gravitational-wave detectors. The aim of this study is to investigate the possible presence of various defects in the materials in order to improve the coating quality. We provide evidence that, due to the synthesis method, about 0.2 wt.% of Ar is present in the coatings, and it can be released by means of thermal treatments, starting around 400 °C. The time and temperature to obtain the total release of Ar increases with the coating thickness; for a thickness of 100 nm, all argon is released below 600 °C, while an isotherm of one hour at 900 °C is necessary for a coating 5 µm thick. Besides the Ar atoms left from the synthesis, other defects, such as Si clusters and silicon dangling bonds, are present in the coatings. The concentration of both of them is strongly reduced by thermal treatments either in vacuum or in air. The overall thickness of the coating is slightly increased after thermal treatments, as witnessed by the change of the period of interference fringes.