Resumen
The thermal atomic layer deposition (ThALD) of yttrium oxide (Y2O3) was developed using the newly designed, liquid precursor, Y(EtCp)2(iPr2-amd), as the yttrium source in combination with different oxygen sources, such as ozone, water and even molecular oxygen. Saturation was observed for the growth of the Y2O3 films within an ALD window of 300 to 450 °C and a growth per cycle (GPC) up to 1.1 Å. The resulting Y2O3 films possess a smooth and crystalline structure, while avoiding any carbon and nitrogen contamination, as observed by X-ray photoelectron spectroscopy (XPS). The films showed strong resistance to fluorine-containing plasma, outperforming other resistant materials, such as silicon oxide, silicon nitride and alumina. Interestingly, the hydrophilic character exhibited by the film could be switched to hydrophobic after exposure to air, with water contact angles exceeding 90°. After annealing under N2 flow at 600 °C for 4 min, the hydrophobicity was lost, but proved recoverable after prolonged air exposure or intentional hydrocarbon exposure. The origin of these changes in hydrophobicity was examined.