Resumen
This work presents complex circuitry from subthreshold standard cell libraries created by geometric STI spacer patterning for bulk planar CMOS technology nodes. Performance/leakage granularity enhancement affords safer multi-Vt synthesis in aggressive voltage scaling schemes. Libraries are evaluated in silicon through implementation of 32-bit datapath 128-bit AES cores. Intra-die nominal temperature (20 °C) analysis reveals improvements of up to 8.65×/24% MEP-to-MEP in frequency and energy-per-cycle respectively, compared to a state-of-the-art subthreshold library. A negative temperature correlation with performance enhancement is demonstrated extending beyond the cell level and into more complex designs. MEP-to-MEP performance enhancement and energy-per-cycle reduction are demonstrated over a temperature range of 0 °C to 85 °C.